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20/40PACK IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 Power Transistor IRF US
20/40PACK IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 Power Transistor IRF US
20/40PACK IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 Power Transistor IRF US
20/40PACK IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 Power Transistor IRF US
20/40PACK IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 Power Transistor IRF US
20/40PACK IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 Power Transistor IRF US
20/40PACK IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 Power Transistor IRF US
20/40PACK IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 Power Transistor IRF US
20/40PACK IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 Power Transistor IRF US
20/40PACK IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 Power Transistor IRF US
20/40PACK IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 Power Transistor IRF US
20/40PACK IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 Power Transistor IRF US
20/40PACK IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 Power Transistor IRF US
20/40PACK IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 Power Transistor IRF US

20/40PACK IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 Power Transistor IRF US

$ 6.76

  • Brand: Unbranded
  • Bundle Description: 20/40pcs IRF3205 MOSFET N-CHANNEL TO-220 Transistor
  • Feature: Ultra Low On-Resistance, Dynamic dv/dt Rating, Fast Switching
  • Function: Power Transistor
  • MPN: IRF3205
  • Maximum Base-Emitter Voltage: 55V
  • Maximum DC Collector Current: 110A
  • Maximum Operating Temperature: 175 °C (347 °F)
  • Maximum Power Dissipation: 200W
  • Model: IRF3205
  • Mounting Style: Through-Hole
  • Number of Pins: 3 Pins
  • Packaging: Tube
  • Rise Time (tr): 101 nS
  • Series: IRF3205
  • Transistor Category: Power Transistor
  • Transistor Type: MOSFET
  • Type: N-Channel Enhancement Mode MOSFET
  • Type of Control Channel: N -Channel

Description

Description: Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Qty:20pcs/40pcs optional Specification: Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 200 W Maximum Drain-Source Voltage 'Vds': 55 V Maximum Gate-Source Voltage 'Vgs': 20 V Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V Maximum Drain Current 'Id': 110 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 146(max) nC Rise Time (tr): 101 nS Drain-Source Capacitance (Cd): 781 pF Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm Package Included: 20/40 x IRF3205 IR MOSFET N-CHANNEL HEXFET Power Transistor On Aug 11, 2024 at 21:09:10 PDT, seller added the following information: