-40%
20pcs IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 HEXFET Power Transistor IRF
20pcs IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 HEXFET Power Transistor IRF
20pcs IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 HEXFET Power Transistor IRF
20pcs IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 HEXFET Power Transistor IRF
20pcs IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 HEXFET Power Transistor IRF
20pcs IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 HEXFET Power Transistor IRF

20pcs IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 HEXFET Power Transistor IRF

$ 5.23

  • Brand: International Rectifier
  • Bundle Description: 20pcs IRF3205 IR MOSFET N-CHANNEL TO-220 Transistor
  • Custom Bundle: No
  • Function: Power Transistor
  • MPN: IRF3205
  • Maximum Power Dissipation: 200W
  • Model: MOSFET
  • Modified Item: No
  • Mounting Style: Through-Hole
  • Number of Pins: 3
  • Package/Case: TO-220
  • Packaging: Tube
  • Series: IRF3205
  • Transistor Category: Power Transistor
  • Transistor Type: N-Channel JFET
  • Type: N-Channel Enhancement Mode MOSFET
  • UPC: Does not apply
  • gtin13: Does not apply

Description

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description: Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 200 W Maximum Drain-Source Voltage 'Vds': 55 V Maximum Gate-Source Voltage 'Vgs': 20 V Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V Maximum Drain Current 'Id': 110 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 146(max) nC Rise Time (tr): 101 nS Drain-Source Capacitance (Cd): 781 pF Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm Package Included: 20 x IRF3205 IR MOSFET N-CHANNEL HEXFET Power Transistor