Description
Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum Power Dissipation (Pd): 125 W Maximum Drain-Source Voltage 'Vds': 200 V Maximum Gate-Source Voltage 'Vgs': 20 V Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V Maximum Drain Current 'Id': 11 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 44 nC Drain-Source Capacitance (Cd): 1200 pF Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm Package: TO-220 Package Included: 5pcs IRF9640 IRF 9640 Power MOSFET 11A 200V TO-220 "IR" P-Channel Transistor